Comparison of chemical vapor deposition of TiN using tetrakis-diethylamino-titanium and tetrakis-dimethylamino-titanium
- 1 December 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 253 (1-2) , 440-444
- https://doi.org/10.1016/0040-6090(94)90363-8
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Film Properties of CVD Titanium Nitride Deposited with Organometallic Precursors at Low Pressure Using Inert Gases, Ammonia, or Remote ActivationJournal of the Electrochemical Society, 1993
- Investigations of the Growth of TiN Thin Films from Ti ( NMe2 ) 4 and AmmoniaJournal of the Electrochemical Society, 1993
- Comparison of LPCVD Film Conformalities Predicted by Ballistic Transport‐Reaction and Continuum Diffusion‐Reaction ModelsJournal of the Electrochemical Society, 1993
- LPCVD Titanium Nitride for ULSIsJournal of the Electrochemical Society, 1991
- Characterization of CVD-TiN Films Prepared with Metalorganic SourceJapanese Journal of Applied Physics, 1990
- Growth and Properties of LPCVD Titanium Nitride as a Diffusion Barrier for Silicon Device TechnologyJournal of the Electrochemical Society, 1990
- Synthesis of thin films by atmospheric pressure chemical vapor deposition using amido and imido titanium(IV) compounds as precursorsChemistry of Materials, 1990
- Step coverage prediction in low-pressure chemical vapor depositionChemistry of Materials, 1989
- Chemical vapor deposition of titanium nitride at low temperaturesThin Solid Films, 1986
- Investigation of reactively sputtered TiN films for diffusion barriersThin Solid Films, 1986