Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (10) , 1872-1875
- https://doi.org/10.1109/16.277348
Abstract
No abstract availableKeywords
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