Simultaneous extraction of minority-carrier transport parameters in crystalline semiconductors by lateral photocurrent

1 January 1990

journal article
Published by AIP Publishing in Journal of Applied Physics

Vol. 67 (1) , 321-333
https://doi.org/10.1063/1.345256

Abstract

The mathematical analysis and parameter-extraction process for a new characterization method are presented. This method allows simultaneous measurement of the minority-carrier lifetime, diffusion coefficient, and diffusion lengths as well as surface recombination velocity. The technique employs semi-infinite two-dimensional photodiodes and uniform, instead of focused, illumination. The paper deals with the derivation of exact closed-form solutions associated with two-dimensional devices and discusses the simultaneous extraction of minority-carrier transport parameters.

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