The enhancement of quantum well intermixing through repeated ion implantation

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Abstract
Quantum well (QW) intermixing has been performed using low-energy broad-area ion implantation to increase the bandgap energy in a spatially selective manner. There is a maximum single dose beyond which further intermixing of the QWS is impeded by damage to the semiconductor surface. We demonstrate that this problem can be overcome by using a series of implants and rapid thermal anneals, with each rapid thermal anneal repairing the crystal surface. Using this technique we have observed shifts in optical bandgap for multiple implants greater than 2.5 times that observed for a single implant.