Frequency modulated microwave photoconductivity measurements for characterization of silicon wafers
- 30 November 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (11) , 1755-1760
- https://doi.org/10.1016/s0038-1101(97)00149-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generationJournal of Applied Physics, 1996
- Charge-carrier kinetics in semiconductors by microwave conductivity measurementsJournal of Applied Physics, 1995
- Optoelectronic characterization by photothermal deflection: Silicon solar cellsJournal of Applied Physics, 1995
- Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwave-detected photoconductance decayJournal of Applied Physics, 1994
- Injection-level-dependent recombination velocities at the Si-SiO2 interface for various dopant concentrationsJournal of Applied Physics, 1994
- The influence of the surface and oxide charge on the surface recombination processSolid-State Electronics, 1993
- Analysis of microwave scattering from semiconductor wafersSolid-State Electronics, 1993
- Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interfaceJournal of Applied Physics, 1992
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.Journal of Applied Physics, 1988
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurementsJournal of Applied Physics, 1986