Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 29 (6) , 727-732
- https://doi.org/10.1109/4.293120
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Circuit performance of low temperature CMOS polysilicon TFT operational amplifiersElectronics Letters, 1993
- Physics and modelling of polysilicon TFTsMicroelectronic Engineering, 1992
- Fabrication and Performance of Digital and Analogue Poly-Si TFT Circuits on GlassPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Polysilicon TFT circuit design and performanceIEEE Journal of Solid-State Circuits, 1992
- 400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registersIEEE Transactions on Electron Devices, 1991
- New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction methodIEEE Transactions on Electron Devices, 1991