Physics and modelling of polysilicon TFTs
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 89-96
- https://doi.org/10.1016/0167-9317(92)90399-c
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Poly-crystalline silicon thin film devices for large area electronicsMicroelectronic Engineering, 1991
- Avalanche-induced effects in polysilicon thin-film transistorsIEEE Electron Device Letters, 1991
- A Unified Circuit Model for the Polysilicon Thin Film TransistorJapanese Journal of Applied Physics, 1991
- Polycrystalline Si thin-film transistors using thermally crystallized low-pressure chemical vapor deposition a-Si films for the channel layer and P-doped microcrystalline Si films for the source and drain layersJournal of Applied Physics, 1989
- High performance low-temperature poly-Si n-channel TFTs for LCDIEEE Transactions on Electron Devices, 1989
- Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline siliconPhilosophical Magazine Part B, 1988
- Material properties and characteristics of polysilicon transistors for large area electronicsApplied Surface Science, 1987
- High-performance thin-film transistors from optimized polycrystalline silicon filmsApplied Physics Letters, 1987
- Structural studies of low-temperature low-pressure chemical deposited polycrystalline siliconJournal of Applied Physics, 1987
- Determination of gap state density in polycrystalline silicon by field-effect conductanceApplied Physics Letters, 1986