A Unified Circuit Model for the Polysilicon Thin Film Transistor
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A) , L170
- https://doi.org/10.1143/jjap.30.l170
Abstract
This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model.Keywords
This publication has 3 references indexed in Scilit:
- A new analytic model for amorphous silicon thin-film transistorsJournal of Applied Physics, 1989
- The Sub-Threshold Characteristics of Polysilicon Thin-Film-TransistorsJapanese Journal of Applied Physics, 1988
- Material properties and characteristics of polysilicon transistors for large area electronicsApplied Surface Science, 1987