The Sub-Threshold Characteristics of Polysilicon Thin-Film-Transistors
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11R)
- https://doi.org/10.1143/jjap.27.2124
Abstract
It is shown that the sub-threshold characteristics of polysilicon transistors are well described by a model which assumes an exponential gap state density, similar to the ones used for hydrogenated amorphous silicon. The model leads to analytical expressions that give a very good fitting of the experimental data. In contrast, a model based on a simple monoenergetic trap level can in no way account for the observed I D-V G characteristics.Keywords
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