Above threshold characteristics of amorphous silicon alloy thin-film transistors
- 1 December 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (11) , 1202-1203
- https://doi.org/10.1063/1.95097
Abstract
We present experimental evidence to show that the field-effect mobility in amorphous silicon alloy thin-film transistors in the above threshold regime is dependent on the gate voltage. The current-voltage transistor characteristics exhibit a power law dependence on gate voltage with an exponent close to 2.85.Keywords
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