p-type carrier concentration control in lithium-doped zinc selenide grown by MOCVD
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 818-821
- https://doi.org/10.1016/0022-0248(90)91086-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Photoluminescence Properties of Li-Doped ZnSe Films Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- ZnSe/ZnS heteroepitaxial growth using an intermediate strained-layer superlattice bufferJournal of Applied Physics, 1987
- Theoretical study of hole transport in ZnSeJournal of Applied Physics, 1986
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Are impurities the cause of ’’self’’-compensation in large-band-gap semiconductors?Journal of Applied Physics, 1980
- SEM and TEM: Diffusion of lithium in ZnTePhysica Status Solidi (a), 1979
- The Physical Properties and Structure of t-ButyllithiumInorganic Chemistry, 1962