ZnSe/ZnS heteroepitaxial growth using an intermediate strained-layer superlattice buffer

Publisher Website
Google Scholar
Abstract
High-quality ZnSe layers have been successfully grown on ZnS layers with an intermediate ZnSe-ZnS strained-layer superlattice (SLS) by low-pressure metalorganic vapor-phase epitaxy. If we use the SLS buffer between the ZnSe and ZnS layer, the excitonic-emission line in the photoluminescence spectra of the ZnSe epilayers due to the free exciton becomes stronger and emissions related to misfit dislocations weaker compared with those of the ZnSe layer grown directly on the ZnS layer. Reflective high-energy electron diffraction measurements also showed that these (100) ZnSe layers grown on the SLS buffer were single crystals. With double-crystal x-ray diffraction, it is supposed that the misfit strain was completely relaxed by using the SLS buffer in only 0.6-μm-thick ZnSe layer grown on the ZnS layer. From these results, we have found that the ZnSe-ZnS superlattice buffer is very useful for obtaining a good ZnSe/ZnS heterostructure.