Atomic Beam Modifications of Insulator Surfaces
- 1 February 1993
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 76 (2) , 284-291
- https://doi.org/10.1111/j.1151-2916.1993.tb03781.x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD TechniqueJapanese Journal of Applied Physics, 1990
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer LayersJapanese Journal of Applied Physics, 1990
- Plasma assisted deposition techniques and synthesis of novel materialsThin Solid Films, 1988
- On the formation of BN films by ion beam and vapor depositionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Synthesis of cubic boron nitride film by an RF plasma CVD method.Journal of the Japan Society for Precision Engineering, 1987
- Formation of cubic boron nitride films by boron evaporation and nitrogen ion beam bombardment.Journal of the Japan Society for Precision Engineering, 1987
- Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor depositionJournal of Applied Physics, 1984
- The Chemical Deposition of Boron‐Nitrogen FilmsJournal of the Electrochemical Society, 1980
- Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron NitrideJournal of the Electrochemical Society, 1979
- Preparation and Properties of Thin Film Boron NitrideJournal of the Electrochemical Society, 1968