Optical cross sections associated with deep-level impurities in semiconductors
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12) , 8595-8601
- https://doi.org/10.1103/physrevb.33.8595
Abstract
Optical cross sections associated with deep-level impurities in semiconductors are calculated in the tight-binding approximation, using a Green’s-function formalism. The calculations are performed by either neglecting or introducing the modifications undergone by the initial Bloch states in the vicinity of the impurity. Great differences are then observed that enable us to interpret some experimental data available on silicon.Keywords
This publication has 18 references indexed in Scilit:
- Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAsPhysical Review B, 1984
- Final state effects of deep impurities in semiconductorsSolid State Communications, 1984
- Point Defects in Semiconductors IIPublished by Springer Nature ,1983
- Optical cross sections associated with deep levels in semiconductors. II. Comparison of theory with experimentJournal of Physics C: Solid State Physics, 1982
- The photoionisation cross section of deep-level impurities in semiconductorsJournal of Physics C: Solid State Physics, 1980
- Photoionisation of impurities with deep levels in gallium arsenideJournal of Physics C: Solid State Physics, 1980
- Deep impurities in semiconductors. I. Evanescent states and complex band structureJournal of Physics C: Solid State Physics, 1980
- Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAsPhysical Review B, 1978
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965