Study of deep level centers at excited states in GaP by means of transient optical absorption spectroscopy

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Abstract
Transient optical absorption and luminescence induced by an electron pulse in n‐type GaP and their changes induced by a subsequent laser pulse have been measured. It is shown that the decays of the optical absorption and of the luminescence induced by an electron pulse consist of a fast (F) component that decays within 1 ms and slow (S) components having a lifetime of about 10 ms. It is shown also that a laser pulse incident on the specimen after the F component is eliminated reduces the S component and produces the F component. The F component is ascribed to donor‐acceptor recombination and the S component to annihilation of metastable centers.