Investigation of SOI MOSFETs with ultimate thickness
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 339-342
- https://doi.org/10.1016/s0167-9317(99)00400-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Two-dimensional confinement effects in gate-all-around (GAA) MOSFETsSolid-State Electronics, 1998
- Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistorJournal of Applied Physics, 1997
- Electron mobility behavior in extremely thin SOI MOSFET'sIEEE Electron Device Letters, 1995
- Self-consistent quantum-mechanical calculations in ultrathin silicon-on-insulator structuresJournal of Applied Physics, 1994
- Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETsIEEE Electron Device Letters, 1993