Polysilicon capacitor failure during rapid thermal processing
- 1 July 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (7) , 929-933
- https://doi.org/10.1109/t-ed.1986.22597
Abstract
Rapid thermal-processing-induced polysilicon capacitor failure is investigated. Polysilicon-SiO2-Si capacitors fail at the perimeter upon heating to temperatures in excess of 1050°C for a few seconds in vacuum or argon. Shorting occurs when the silicon grains deform due to surface energy-driven diffusion and extend over etch-damaged oxide surrounding the capacitor. The presence of oxygen or nitrogen during, or regrowth of the damaged oxide prior to, rapid thermal processing substantially reduces the failure rate.Keywords
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