Grain growth during transient annealing of As-implanted polycrystalline silicon films
- 1 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 778-780
- https://doi.org/10.1063/1.95401
Abstract
Polycrystalline silicon films deposited on oxidized wafer surfaces were implanted with As and annealed on a Varian IA-200 rapid thermal annealer. The effects of annealing conditions on resultant grain size of original as-deposited columnar grains are presented with a modified model for interfacially driven grain growth. During an initial temperature rise to 910 °C the original grain size (39 nm) and dopant profile are not significantly altered. At 1145 °C the grains have grown to 90 nm and the As is uniformly distributed throughout the film. Additional annealing to 1300 °C in 20 s causes grains to grow to 260 nm. Further grain growth is retarded due to the 300-nm film thickness. During annealing of unencapsulated films a substantial loss of As results in a lower rate of grain growth. When grain size increases, Hall mobility increases and resistivity decreases.Keywords
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