Molecular layer etching of GaAs
- 24 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (8) , 968-970
- https://doi.org/10.1063/1.106477
Abstract
Layer‐by‐layer controlled molecular layer self‐limiting etching at one molecular layer of GaAs was successfully achieved for the first time by alternatively feeding an etchant of Cl and applying a low energy Ar ion beam to the GaAs substrate. The etching rate saturates exactly at one molecular layer per cycle and is independent of etchant feeding rate and the energetic ion beam flux.Keywords
This publication has 7 references indexed in Scilit:
- Atomic Layer Controlled Digital Etching of SiliconJapanese Journal of Applied Physics, 1990
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma SystemJapanese Journal of Applied Physics, 1990
- Digital chemical vapor deposition and etching technologies for semiconductor processingJournal of Vacuum Science & Technology A, 1990
- Digital etching of GaAs: New approach of dry etching to atomic ordered processingApplied Physics Letters, 1990
- Laser bilayer etching of GaAs surfacesApplied Physics Letters, 1989
- The thermal and ion-assisted reactions of GaAs(100) with molecular chlorineJournal of Vacuum Science & Technology B, 1986
- Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on siliconJournal of Applied Physics, 1980