Properties of Pt∕SrBi[sub 2]Ta[sub 2]O[sub 9]∕BL∕Si MFIS Structures Containing HfO[sub 2], SiO[sub 2], and Si[sub 3]N[sub 4] Buffer Layers
- 1 January 2007
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 10 (5) , G25-G28
- https://doi.org/10.1149/1.2710176
Abstract
The physical and electrical properties of (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating , , and Si3N4 as buffer layers were investigated. When employing as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the layer on the Si substrate. This study demonstrates that is one of the best buffer-layer materials for ferroelectric memory applications.Keywords
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