Annealing behavior of light-induced defects in boron-doped hydrogenated amorphous silicon alloys
- 15 June 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5539-5541
- https://doi.org/10.1063/1.334835
Abstract
Light-induced effects in lightly boron-doped hydrogenated amorphous silicon alloys have been studied in coplanar and sandwich sample configurations. It is observed that metastable changes in these films anneal out at a significantly lower temperature (≤ 100 °C) than in undoped films.This publication has 12 references indexed in Scilit:
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