Correlation between trap characterisation by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs
- 31 December 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (12) , 1713-1719
- https://doi.org/10.1016/0038-1101(92)90251-7
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Low frequency oscillations in GaAs MESFETsSolid-State Electronics, 1993
- Characterisation of the time-dependent properties of GaAs FETsSemiconductor Science and Technology, 1990
- Mechanisms for low-frequency oscillations in GaAs FET'sIEEE Transactions on Electron Devices, 1987
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Deep traps in ideal n-InP Schottky diodesElectronics Letters, 1978
- Electrical traps in GaAs microwave f.e.t.sElectronics Letters, 1976