Optical detection of growth oscillations from high vacuum up to low-pressure metalorganic vapor phase epitaxy like conditions

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Abstract
We report optical, real‐time detection of growth oscillations for pressures up to low‐pressure metalorganic vapor phase epitaxy (LP‐MOVPE) like conditions. The measurements were performed using the reflectance difference technique during epitaxialgrowth of GaAs in a vacuum chemical epitaxy (VCE) chamber in which the LP‐MOVPE conditions were obtained by adding hydrogen. Growth oscillations could still be obtained over a wide range of V/III ratios at pressures in the mbar range. Under LP‐MOVPE conditions we could observe oscillation amplitudes comparable to those found under VCE conditions. Furthermore, the occurrence of oscillations when hydrogen is introduced shows that the layer‐by‐layer growth is not affected by the presence of hydrogen. These results seem to open the way for the in situ detection of growth oscillations even in conventional MOVPE systems.