A 120ns 4Mb CMOS EPROM

23 March 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 74-75
https://doi.org/10.1109/isscc.1987.1157230

Abstract

A 512K×8b EPROM fabricated in 0.8μm, CMOS with a cell size of 9μm2and a chip size of 5.9×14.9mm2will be reported. The device programs at a rate of 10μs per byte, reads with an access time of 120ns and draws 10mA of active current.

Keywords

EPROM
CIRCUIT TESTING
PLASTIC PACKAGING
DELAY EFFECTS
MICROCOMPUTERS
LASER BEAM CUTTING
LASER MODES
COSTS
MONITORING
MEMORY

This publication has 2 references indexed in Scilit:

A CMOS 1Mb EPROM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
A programmable 80ns 1Mb CMOS EPROM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985