Theoretical study of oxygen chemisorption on (111) and (100) silicon surfaces
- 30 December 1985
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 113 (6) , 321-324
- https://doi.org/10.1016/0375-9601(85)90175-6
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Chemisorption of Atomic Oxygen on Si(100): Self-Consistent Cluster and Slab Model InvestigationsPhysical Review Letters, 1984
- Interpretation of the spectra obtained from oxygen-adsorbed and oxidized silicon surfacesPhysical Review B, 1982
- Chemisorption of atomic oxygen on silicon surfaceSolid State Communications, 1982
- The (100) silicon—silicon dioxide interface. I. Theoretical energy structurePhysical Review B, 1981
- Oxidation of silicon surfacesJournal of Vacuum Science and Technology, 1981
- Simple valence force field-bond energy bond order (SVFF-BEBO) model for chemisorption of Oxygen on Si(111)Surface Science, 1981
- Theoretical and experimental investigations of the electronic structure of oxygen on siliconJournal of Vacuum Science and Technology, 1979
- Theoretical studies of Si and GaAs surfaces and initial steps in the oxidationJournal of Vacuum Science and Technology, 1978
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- The adsorption of oxygen on silicon (111) surfaces. ISurface Science, 1973