AlGaN/GaN-HEMTs for power applications up to 40 GHz
- 1 January 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 0.15 /spl mu/m T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 /spl mu/m gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies f/sub t/ and f/sub max/ of 65 GHz and 149 GHz, respectively. Large periphery 720 /spl mu/m gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors' knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the Ka-band.Keywords
This publication has 2 references indexed in Scilit:
- GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mmElectronics Letters, 2001
- AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20 GHzElectronics Letters, 2000