AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20 GHz
- 6 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (14) , 1234-1236
- https://doi.org/10.1049/el:20000898
Abstract
The power performance of AlGaN/GaN MODFETs grown on semi-insulating SiC is reported. The epitaxial layers were grown by MOCVD with a good uniformity and excellent carrier mobility of 1300 cm2/Vs at room temperature. Devices with gate length of 0.3 µm were fabricated and characterised, yielding a record transconductance of 300 mS/mm. Active load-pull measurements yielded 594 mW total output power at 20 GHz. At 15 GHz a total output power of 3.3 W was measured. To the authors' knowledge, these results represent the highest output power so far achieved from a single GaN-device at Ku and K-band.Keywords
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