Anomalous surface transformations in crystalline silicon induced by subpicosecond laser pulses
- 20 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (3) , 209-211
- https://doi.org/10.1063/1.96797
Abstract
Surface transformations in crystalline silicon are investigated, using 400 fs laser pulses, at intensities just above the melting threshold. Anomalous changes of surface heights are observed, and they are enhanced for shorter pulses. These experimental results are well understood with a picture that shock stress generated by the ultrashort pulse excitation causes anomalous surface transformations of crystalline silicon.Keywords
This publication has 15 references indexed in Scilit:
- Pulsewidth-dependence of nonlinear energy deposition and redistribution in Si, GaAs and Ge during 1 μm picosecond irradiationJournal of Luminescence, 1985
- Temporally resolved imaging of silicon surfaces melted with intense picosecond 1-μm laser pulsesApplied Physics Letters, 1985
- Formation of Periodic Ripple Structures in Picosecond Pulsed Laser Annealing of Ion-Implanted SiliconJapanese Journal of Applied Physics, 1984
- Various phase transitions and changes in surface morphology of crystalline silicon induced by 4–260-ps pulses of 1-μm radiationApplied Physics Letters, 1984
- Energy Transfer during Silicon Irradiation by Femtosecond Laser PulsePhysical Review Letters, 1984
- Picosecond Dynamics of Pulsed Laser Annealing of Ion-Implanted SiliconJapanese Journal of Applied Physics, 1984
- Laser-induced nonlinear absorption in silicon: Free-carrier absorption versus thermal effectsPhysical Review B, 1983
- Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in SiliconPhysical Review Letters, 1983
- Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulsesJournal of Applied Physics, 1982
- Generation of Broadly Tunable Subpicosecond Light Pulses from a Synchronously and Passively Mode-Locked CW Dye LaserJapanese Journal of Applied Physics, 1980