Pulsewidth-dependence of nonlinear energy deposition and redistribution in Si, GaAs and Ge during 1 μm picosecond irradiation
- 28 February 1985
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 30 (1-4) , 272-289
- https://doi.org/10.1016/0022-2313(85)90059-6
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Various phase transitions and changes in surface morphology of crystalline silicon induced by 4–260-ps pulses of 1-μm radiationApplied Physics Letters, 1984
- Optical absorption coefficient of silicon at 1.152 μ at elevated temperaturesApplied Physics Letters, 1982
- Picosecond Laser Damage Mechanisms At Semiconductor SurfacesPublished by SPIE-Intl Soc Optical Eng ,1982
- Intensity-dependent absorption in semiconductorsApplied Physics Letters, 1980
- Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μmJournal of Physics C: Solid State Physics, 1979
- Two-photon absorption of neodymium laser radiation in gallium arsenideJournal of Applied Physics, 1978
- Two-photon absorption in semiconductors with picosecond laser pulsesPhysical Review B, 1976
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Two-photon absorption of Nd laser radiation in GaAsApplied Physics Letters, 1973
- OPTICAL LIMITING IN SEMICONDUCTORSApplied Physics Letters, 1969