A Self-Aligned Mo-Silicide Formation
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (1A) , L57
- https://doi.org/10.1143/jjap.22.l57
Abstract
Mo-silicides, formed by a new technique combining ion implantation through metal film (ITM) to induce metal/Si interface mixing and also to form doped layers with appropriate subsequent annealings, were found to have excellent properties in film uniformity and self-aligned formation for exposed Si areas (contact holes). These excellent silicidation properties in the ITM technique were also confirmed for patterned poly-Si silicidation. Lateral silicide growth out of contact holes, usually observed in silicidation using mere thermal reaction of refractory-metal/Si structures, was markedly suppressed in the ITM silicidation.Keywords
This publication has 3 references indexed in Scilit:
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- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972