Electron-paramagnetic-resonance study of heat-treatment centers in n-type silicon
- 1 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11) , 4404-4405
- https://doi.org/10.1063/1.339076
Abstract
Donor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ‘‘thermal-donor-’’ and ‘‘new-donor’’-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results allow one to identify the spectra in both regions as arising from the Si-NL10 defect.This publication has 5 references indexed in Scilit:
- EPR studies of heat-treatment centers inp-type siliconPhysical Review B, 1987
- Paramagnetic resonance of a new-oxygen-donor related center in siliconPhysical Review B, 1986
- Oxygen donor formation and oxygen precipitation in czochralski silicon due to heat treatment at 600 to 800 °cPhysica Status Solidi (a), 1985
- Electron spin resonance study of oxygen donors in silicon crystalsJournal of Applied Physics, 1983
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978