A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (2) , 392-399
- https://doi.org/10.1109/t-ed.1987.22935
Abstract
Hybrid techniques for coupling Monte Carlo and drift-diffusion models for device simulation show excellent promise because of their computational efficiency. We present a rigorous technique for coupling the two models that retains the computational efficiency of the drift-diffusion scheme and the rigor of a Monte Carlo treatment. From regional Monte Carlo simulation, the position'dependent mobility, diffusion coefficient, and the energy-gradient field are evaluated for specific regions of common device structures where transient hot-electron effects are important, These are used in a new technique to couple Monte Carlo and drift-diffusion models for computationally efficient global device simulation.Keywords
This publication has 16 references indexed in Scilit:
- D grad ν or grad(Dν)?Journal of Applied Physics, 1984
- Modeling and characterization for high-speed GaAlAs-GaAs n-p-n heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Numerical analysis of heterostructure semiconductor devicesIEEE Transactions on Electron Devices, 1983
- Energy-diffusion equation for an electron gas interacting with polar optical phononsPhysical Review B, 1982
- Hot electron diffusion in fine line semiconductor devicesSolid-State Electronics, 1982
- GaAlAs-GaAs ballistic hetero-junction bipolar transistorElectronics Letters, 1982
- Bulk hot-electron properties of cubic semiconductorsAdvances in Physics, 1979
- Diffusion coefficient of hot electrons in GaAsSolid State Communications, 1978
- Transport Properties of GaAsPhysical Review B, 1968
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962