Reaction rates for Pt on GaAs
- 15 April 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (8) , 355-357
- https://doi.org/10.1063/1.1655214
Abstract
The rate at which GaAs reacts with Pt has been determined at selected temperatures between 300 and 400 °C. The amount of GaAs reacted is determined by measuring the movement of the original Pt Schottky‐barrier contact into the GaAs. Data are presented which show the amount of GaAs reacted as a function of anneal time at several different temperatures. The reaction follows a parabolic rate law with activation energy of 1.6 eV. Some change in the electrical characteristics of the Schottky barrier is observed.Keywords
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