An instrument for the rapid determination of semiconductor impurity profiles
- 1 March 1971
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 4 (3) , 213-221
- https://doi.org/10.1088/0022-3735/4/3/014
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Detailed computer analysis of LSA operation in CW transferred electron devicesIEEE Transactions on Electron Devices, 1970
- Material selection for efficient transferred-electron devices at Q bandElectronics Letters, 1970
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968
- The influence of doping fluctuations on limited space-charge accumulation in n-type gallium arsenidePhysics Letters A, 1968
- The effect of surface treatment on gallium arsenide Schottky barrier diodesSolid-State Electronics, 1968
- A Circuit with Logarithmic Transfer Response over 9 DecadesIEEE Transactions on Circuit Theory, 1964
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942