The influence of doping fluctuations on limited space-charge accumulation in n-type gallium arsenide
- 15 July 1968
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 27 (5) , 293-294
- https://doi.org/10.1016/0375-9601(68)90710-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- LSA Oscillator-Diode TheoryJournal of Applied Physics, 1967
- Effect of Domain and Circuit Properties on Oscillations in GaAsIBM Journal of Research and Development, 1966