The effect of surface treatment on gallium arsenide Schottky barrier diodes
- 30 April 1968
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (4) , 502
- https://doi.org/10.1016/0038-1101(68)90034-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- The Chemical Polishing of Gallium Arsenide in Bromine-MethanolJournal of the Electrochemical Society, 1963