Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes

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Abstract
Transient phenomena in capacitance (C) and reverse current (I) were observed for Au-n-Type GaAs Schottky barrier diodes at different carrier concentrations in GaAs crystals. Both (C i -2-C s -2) and I s /I i , where subscripts i and s refer to the initial condition and the steady state after voltage application, respectively, approach certain values independent of voltage at high reverse voltages but dependent of carrier concentrations and trap densities. The transient phenomena disappear in crystals of high carrier concentrations, say, 2×1017 cm-3. The results are explained by trapping effects in the space charge layer. The trap density in boat-grown GaAs crystals is estimated to be of the order of magnitude of 1014 cm-3∼1016 cm-3.