Detailed balance in single-charge traps
- 15 April 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (15) , 9997-10000
- https://doi.org/10.1103/physrevb.47.9997
Abstract
We propose a model to explain recent experimental results concerning the charge trapping in a system of ultrasmall tunnel junctions. Degradation processes in the system are assumed to generate the strange single-electron jumps observed. The model predicts many spectacular features of charge trapping so that it can easily be verified.Keywords
This publication has 10 references indexed in Scilit:
- Measurement of discrete charge in the systems of ultra-small tunnel junctionsJournal of Low Temperature Physics, 1993
- Single-electron charging of a superconducting islandPhysical Review Letters, 1992
- New method to improve the adhesion strength of tungsten thin film on silicon by W2N glue layerApplied Physics Letters, 1992
- Determination of Coulomb-blockade resistances and observation of the tunneling of single electrons in small-tunnel-junction circuitsPhysical Review Letters, 1991
- Direct observation of macroscopic charge quantizationZeitschrift für Physik B Condensed Matter, 1991
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- noise and other slow, nonexponential kinetics in condensed matterReviews of Modern Physics, 1988
- Observation of the incremental charging of Ag particles by single electronsPhysical Review Letters, 1987
- Anomalous low-temperature thermal properties of glasses and spin glassesPhilosophical Magazine, 1972
- Charge-Quantization Studies Using a Tunnel CapacitorPhysical Review Letters, 1969