Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method
- 1 May 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (9) , 4344-4353
- https://doi.org/10.1063/1.350818
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Defects in plasma-deposited hydrogenated amorphous silicon prepared under visible light illuminationJournal of Applied Physics, 1991
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Gap States in a-SiGe:H Examined by the Constant Photocurrent MethodJapanese Journal of Applied Physics, 1990
- The defect density in amorphous siliconPhilosophical Magazine Part B, 1989
- Relationship between optical and structural properties of hydrogenated amorphous siliconApplied Physics A, 1989
- Gap-state distribution in n-type and p-type a-Si:H from optical absorptionJournal of Non-Crystalline Solids, 1987
- Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cellsApplied Physics A, 1985
- Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilaneSolar Energy Materials, 1984
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Annealing and light induced changes in the field effect conductance of amorphous siliconJournal of Applied Physics, 1982