Defects in plasma-deposited hydrogenated amorphous silicon prepared under visible light illumination
- 15 February 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (4) , 2561-2567
- https://doi.org/10.1063/1.348664
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Properties of plasma-deposited hydrogenated amorphous silicon prepared under visible light illuminationJournal of Applied Physics, 1990
- Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH4Japanese Journal of Applied Physics, 1990
- Gap density of states in amorphous silicon-germanium alloy: Influence on photothermal deflection spectroscopy and steady-state conductivity measurementsJournal of Applied Physics, 1990
- Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous siliconJournal of Applied Physics, 1990
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon filmsApplied Physics Letters, 1987
- Below-gap primary photocurrent associated with correlated defects in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1985
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilaneSolar Energy Materials, 1984
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983