A simple technique for simultaneous fabrication of p +/n diodes and ohmic contacts on n-type InP
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (11) , 5699-5702
- https://doi.org/10.1063/1.351356
Abstract
Low leakage current p+/n step junctions with mechanically stable ohmic contacts to p+ layer are fabricated on n‐InP wafers simultaneously by a simple procedure consisting of vacuum evaporation of Ni, Zn, and Au followed by a short heat treatment at 340 °C. Current‐voltage and capacitance‐voltage measurements, secondary ion mass spectroscopy, and deep level transient spectroscopy are employed to characterize the diodes fabricated and to understand their structure.This publication has 22 references indexed in Scilit:
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