Record high characteristic temperature ( T o = 122 K)of 1.55 µm strain-compensated AlGaInAs/AlGaInAs MQW lasers withAlAs/AlInAs multiquantum barrier
- 7 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (1) , 51-52
- https://doi.org/10.1049/el:19990031
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Proposal and Demonstration of AlAs-Oxide Confinement Structure for InP-Based Long Wavelength LasersJapanese Journal of Applied Physics, 1997
- Electron reflectance of multiquantum barrier (MQB)Electronics Letters, 1986