Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 μm) lasers
- 15 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2) , 187-189
- https://doi.org/10.1063/1.94275
Abstract
We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p-n junction plane coincides with the surface exposed in the high-temperature H2 ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.Keywords
This publication has 7 references indexed in Scilit:
- Shunt current and excess temperature sensitivity of
I
th
and η
ex
in 1.3 μm InGaAsP DH lasersElectronics Letters, 1982
- Facet degradation and passivation of InGaAsP/InP lasersApplied Physics Letters, 1982
- V-grooved substrate buried heterostructure InGaAsP/InP laserElectronics Letters, 1981
- Low threshold InGaAsP/InP buried crescent laser with double current confinement structureIEEE Journal of Quantum Electronics, 1981
- InGaAsP/InP buried crescent laser emitting at 1.3 μm with very low threshold currentElectronics Letters, 1980
- Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µmJapanese Journal of Applied Physics, 1980
- 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperatureIEEE Journal of Quantum Electronics, 1979