Investigation of the transition region between layers wet grown at and Si
- 7 April 1997
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 9 (14) , 2947-2954
- https://doi.org/10.1088/0953-8984/9/14/009
Abstract
Silicon oxide layers wet grown at on silicon substrates of integrated circuit quality have been investigated by slow-positron-implantation spectroscopy and Auger electron spectroscopy. The total thickness of pure on top of a transition zone is determined by ellipsometric measurements; the positron/Auger results indicate that the transition zone extends over 15 - 23 nm. Its thickness decreases as the layer is thinned by a wet-chemical process at room temperature. The results are consistent with earlier secondary-neutral mass spectroscopy measurements.Keywords
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