The Initial Stages of MBE Growth of InSb on GaAs(100) - A High Misfit Heterointerface
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxyPhilosophical Magazine A, 1989
- Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBESemiconductor Science and Technology, 1989
- Interfacial studies and electrical characterisation of heteroepitaxial InSb on GaAs (100) grown by MBEJournal of Crystal Growth, 1989
- Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxyApplied Physics Letters, 1988
- Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation.MRS Proceedings, 1988
- Defects in Large-Misfit HeteroepitaxyMRS Proceedings, 1988
- A TEMin situstudy of dislocation glide in a III-V compound (InSb)Philosophical Magazine A, 1987
- Properties of MBE grown InSb and InSb1−xBixJournal of Vacuum Science & Technology A, 1983
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975