Interface defects and induced voltage contrast in SEM studies of bare SiO2Si systems
- 1 December 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (12) , 1667-1674
- https://doi.org/10.1016/0038-1101(88)90062-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- A study of oxide traps and interface states of the silicon-silicon dioxide interfaceJournal of Applied Physics, 1980
- Experimental location of the surface and bulk 1f noise currents in low-noise, high-gain NPN planar transistorsSolid-State Electronics, 1973
- Selective Electron-Beam Irradiation of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1968