Unified model for short-channel poly-Si TFTs

This publication has 14 references indexed in Scilit:

• Unified substrate current model for MOSFETs
  Solid-State Electronics, 1997
• Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs
  IEEE Transactions on Electron Devices, 1996
• A new approach to determine the drain-and-source series resistance of LDD MOSFET's
  IEEE Transactions on Electron Devices, 1993
• Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs
  IEEE Transactions on Electron Devices, 1993
• Unified MOSFET model
  Solid-State Electronics, 1992
• A novel method to characterize MOS transistors with mixed gate dielectric technologies
  IEEE Transactions on Electron Devices, 1992
• A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors
  IEEE Transactions on Electron Devices, 1990
• A model of current—Voltage characteristics in polycrystalline silicon thin-film transistors
  IEEE Transactions on Electron Devices, 1987
• Numerical simulation of polycrystalline-Silicon MOSFET's
  IEEE Transactions on Electron Devices, 1986
• The effect of high fields on MOS device and circuit performance
  IEEE Transactions on Electron Devices, 1984