Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs

This publication has 14 references indexed in Scilit:

• Enhanced channel mobility in polysilicon thin film transistors
  IEEE Electron Device Letters, 1994
• A simple EEPROM cell using twin polysilicon thin film transistors
  IEEE Electron Device Letters, 1994
• Correlation of polysilicon thin-film transistor characteristics to defect states via thermal annealing
  IEEE Transactions on Electron Devices, 1994
• Design and operation of poly-Si analogue circuits
  IEE Proceedings - Circuits, Devices and Systems, 1994
• Measurement of collector and emitter resistances in bipolar transistors
  IEEE Transactions on Electron Devices, 1991
• Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
  Japanese Journal of Applied Physics, 1990
• Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films
  Japanese Journal of Applied Physics, 1989
• Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT
  IEEE Electron Device Letters, 1989
• Subthreshold model of a polycrystalline silicon thin-film field-effect transistor
  Applied Physics Letters, 1987
• The electrical properties of polycrystalline silicon films
  Journal of Applied Physics, 1975