Correlation of polysilicon thin-film transistor characteristics to defect states via thermal annealing

This publication has 7 references indexed in Scilit:

• Analysis of current voltage characteristics of low-temperature-processed polysilicon thin-film transistors
  IEEE Transactions on Electron Devices, 1992
• Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
  IEEE Electron Device Letters, 1991
• Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistors
  Journal of Applied Physics, 1990
• Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors
  IEEE Transactions on Electron Devices, 1990
• Material properties and characteristics of polysilicon transistors for large area electronics
  Applied Surface Science, 1987
• Electrical and Electronic Properties of Grain Boundaries in Silicon
  MRS Proceedings, 1987
• Hydrogenation of transistors fabricated in polycrystalline-silicon films
  IEEE Electron Device Letters, 1980