Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistors

This publication has 11 references indexed in Scilit:

• The Sub-Threshold Characteristics of Polysilicon Thin-Film-Transistors
  Japanese Journal of Applied Physics, 1988
• Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon
  Philosophical Magazine Part B, 1988
• Material properties and characteristics of polysilicon transistors for large area electronics
  Applied Surface Science, 1987
• Determination of gap state density in polycrystalline silicon by field-effect conductance
  Applied Physics Letters, 1986
• Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET's
  IEEE Transactions on Electron Devices, 1986
• Completely integrated contact-type linear image sensor
  IEEE Transactions on Electron Devices, 1985
• Exponential band tails in polycrystalline semiconductor films
  Physical Review B, 1985
• Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
  IEEE Transactions on Electron Devices, 1983
• Grain boundary states and the characteristics of lateral polysilicon diodes
  Solid-State Electronics, 1982
• Energy distribution of trapping states in polycrystalline silicon
  Journal of Applied Physics, 1980